Innovation Title | Categories | Lead Inventor | |
---|---|---|---|
Method for Increasing Short Circuit Robustness
2018-MORI-68146 |
Morisette, Dallas T | ||
Optimized Vertical Power DMOSFETs in Silicon Carbide
64281 |
Cooper, Jr., James Albert | ||
SiC Power DMOSFETs with Self-Aligned Source Contacts
65034 |
Cooper, Jr., James Albert | ||
High Voltage N-Channel Insulated Gate Bipolar Transistor (IGBT) in Silicon Carbide
64280 |
Cooper, Jr., James Albert | ||
Dr. James A. Cooper Jr. is the Jai N. Gupta Professor of Electrical and Computer Engineering at Purdue University. He received a B.S. from Mississippi State University, M.S. from Stanford University, and Ph.D. from Purdue University. Dr. Cooper's research focuses on semiconductor device physics, wide band gap semiconductors, power switching devices, electron transport in semiconductors, MOS interface characterization, and graphene electronic devices. For additional information, visit Dr. Cooper's Purdue website: https://engineering.purdue.edu/ECE/People/profile?resource_id=3031 |
|