| 2019-DOU-68710 | |
| Lateral heterostructures of two-dimensional (2D) semiconductors have applications in industries such as next-generation electronics, optoelectronics and photonics. One particularly promising class of lateral heterostructures is based on 2D Ruddlesden-Popper halide perovskites, due to their diversity and tunability. However, high ion diffusivity results in rapid interdiffusion of halides across the heterostructure interfaces. Interdiffusion affects the sharpness of the interfaces and subsequently the electrical and optical properties of the device, greatly limiting their stability and preventing the halide perovskite class from realizing its full potential. Researchers at Purdue University have developed a new way to synthesize halide perovskite heterojunctions that results in the effective inhibition of ion interdiffusion. With this method, they were able to achieve stable and near-atomically sharp interfaces which make halide perovskite heterostructures a strong option for application in a wide range of industries. Advantages: -Reduced interdiffusion at interfaces -Increased stability at interfaces -Enables application of the promising halide perovskite class of 2D lateral heterostructures Potential Applications: -Next-generation electronics -Optoelectronics -Photonics |
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Sep 4, 2020
Utility-Gov. Funding
United States
(None)
(None)
Sep 12, 2019
Provisional-Patent
United States
(None)
(None)
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Purdue Office of Technology Commercialization 1801 Newman Road West Lafayette, IN 47906 Phone: (765) 588-3475 Fax: (765) 463-3486 Email: otcip@prf.org |