2018-KUBI-68297 | |
The Cascade Tunneling Field Effect Transistor (CasTFET) is a transistor concept that combines the tunneling field effect transistor (TFET) with the cascade system. One issue with the existing transistor concept is that it requires a TFET device, thus offering only limited application space. There is a need for a new technology that expands the CasTFET concept and is not restricted to TFET devices and the materials common to them. Researchers at Purdue University have developed a general cascade field effect transistor concept. This concept will help logic device designers who want to fabricate smaller, faster, and more energy efficient transistors. By introducing an additional and new way of switching the current in a transistor, this technology will allow for the usage of similar or identical materials and device dimensions that are currently used. Advantages: -No restriction to TFET devices -High market value Potential Applications: -Transistors -Circuits |
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Jun 7, 2019
Utility Patent
United States
11,362,200
Jun 14, 2022
Jun 13, 2022
CON-Patent
United States
(None)
(None)
Jun 8, 2018
Provisional-Patent
United States
(None)
(None)
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Purdue Office of Technology Commercialization The Convergence Center 101 Foundry Drive, Suite 2500 West Lafayette, IN 47906 Phone: (765) 588-3475 Fax: (765) 463-3486 Email: otcip@prf.org |