| 2018-YOUN-68190 | |
| Boron Carbide (B4C) has notoriously low sintering ability due to its strong, stable covalent bonds. The temperatures required to pressurelessly sinter B4C effectively with no additives are in excess of 2300 C and are difficult and expensive to reach. Sintering aids have been widely shown to improve the densification of B4C at lower temperatures than would be required for non-doped systems. A wide variety of sintering aids have been used during pressureless sintering; however, there is an unmet need to develop a sintering aid that is able to increase the density and hardness of B4C components. Researchers at Purdue University have developed a simple, unique technique for B4C densification in the production of B4C components. Using a new sintering aid results in higher relative densities and increased hardness of B4C components compared to traditional non-doped systems as well as other sintering aids. Advantages: -Higher relative density -Increased hardness Potential Applications: -Wear-resistant bearings -Sand-blasting nozzles -Abrasives -Ballistic armor |
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Oct 17, 2019
Utility Patent
United States
11,028,019
Jun 8, 2021
Nov 29, 2018
Provisional-Patent
United States
(None)
(None)
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Purdue Office of Technology Commercialization The Convergence Center 101 Foundry Drive, Suite 2500 West Lafayette, IN 47906 Phone: (765) 588-3475 Fax: (765) 463-3486 Email: otcip@prf.org |
