Method for Increasing Short Circuit Robustness

Back to all technologies
Download as PDF
The Metal Oxide Semiconductor Field Effect Transistor (MOSFET) transistor is a semiconductor device which is widely used for switching and amplifying electronic signals in the electronic devices. As the power of these is reduced, they become more susceptible to failure. Current solutions use expensive and complex speed gate drivers and a short circuit protection scheme. These current methods are inefficient and not cost effective. They are also not as reliable as they need to be. There is a need for a solution that is cost effective, efficient, and reliable.

Researchers at Purdue University have developed a new method to improve the robustness of silicon carbide MOSFETs. They do this by increasing their tolerance to short circuit events. By increasing the gate oxide capacitance and decreasing the thickness of the gate insulator, they can improve the MOSFETs short circuit withstand time. This makes the MOSFET more cost effective and much more reliable. It is much less susceptible to failure with this method. This method could open the door to more reliable MOSFETs in the near future.

-No negative side effects
-Reduces short channel effects
-Increased short circuit withstand time

Potential Applications:
-Short circuit withstand time
Jun 11, 2019
Utility Patent
United States

Jun 13, 2018
United States
Purdue Office of Technology Commercialization
The Convergence Center
101 Foundry Drive, Suite 2500
West Lafayette, IN 47906

Phone: (765) 588-3475
Fax: (765) 463-3486