|The U.S. Navy seeks a partner for licensing and collaboration on a radiation hardened by design (RHBD) power structure that address radiation problems exhibited by commercial power devices by combining the features of a MOSFET with a MESFET.
Vertical double-diffused metal oxide field effect transistors (MOSFETs) are used because of their high-current, high-voltage capabilities. Attempts have been made to enhance the electrical and radiation performance properties of MOSFETs through modifications and improvements in the design, layout, and fabrication processes. Numerous radiation issues have been discovered and significant research has been devoted to resolving radiation issues such as total ionizing dose, single-event gate rupture, and SEB issues.
Naval Surface Warfare Center, Crane Division (NSWC Crane) has developed a patent pending suite of innovative radiation hardened by design (RHBD power structures addressing an array of radiation issues exhibited by commercial power devices, such as single event gate rupture (SEGR), single-event burnout (SEB), and ionizing radiation.
Metal-semiconductor field effect transistors (MESFETs) use a reverse biased schottky diode to control currently flow by modulating the depletion layer width. Unlike MOSFETs, MESFETs exhibit a natural hardness to TID radiation. TID issues in MOSFETs are directly related to trapped charge in gate oxide used to modulate conductive channel; where, MESFETs do not use dielectric materials to form a conductive channel making it naturally hard to TID. NSWC Crane's invention is an innovative structure integrating and combining aspects of improved VDMOSFETs with an operational gate of a MESFET or schottky gate.
These RHBD power structures provide unique operating characteristics and performance that lowers manufacturing costs, allows for smaller sizes, reduces overall weight, and supports higher voltages which lead to more design options and flexibility for products. Device designs allow for easy integration into existing fabrication processes with minimal effort and costs. Thy can be fabricated as a discrete power device or fabricated into more complex integrated circuits such as linear or analog circuits.
Aug 15, 2017
Purdue Office of Technology Commercialization
The Convergence Center
101 Foundry Drive, Suite 2500
West Lafayette, IN 47906
Phone: (765) 588-3475
Fax: (765) 463-3486