| 2017-APPE-67885 | |
| Resistive random access memory (RRAM) occurs promising as an emerging technology due to its potential scalability, high operation speed, high endurance and ease of process flow. Typically two types of switching mechanisms are distinguished in RRAM devices. In the valence change memory (VCM), the electromigration of induced anions modifies the valence states of the cations. All the observed RRAM behavior involves the uncontrollable movement of individual atoms. Therefore, there is a need in the art for a new switching mechanism for fabricating RRAM devices. Researchers at Purdue University have developed a novel semiconductor/insulator-to-semimetal transition based RRAM. The technology described can be used in fabrication of deep in-memory computing or memristor-based nonvolatile logics circuits and devices. It uses a switching mechanism by an electric-field or Joule heating or both effects that induces a semiconductor/insulator-to-semimetal phase transition enabling RRAM operation. Advantages: -Forming-free -Large off/on current ratio -low set/reset current Potential Applications: -RRAM -Deep memory computing |
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Aug 23, 2018
CIP-Patent
United States
10,756,263
Aug 25, 2020
May 23, 2018
Utility Patent
United States
10,505,109
Dec 10, 2019
Aug 25, 2020
CON-Gov. Funding
United States
(None)
(None)
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Purdue Office of Technology Commercialization The Convergence Center 101 Foundry Drive, Suite 2500 West Lafayette, IN 47906 Phone: (765) 588-3475 Fax: (765) 463-3486 Email: otcip@prf.org |
