|Intensive efforts in the production of large-area, high-quality 2D crystals have led to remarkable progress in deriving 2D crystals of various compositions, structures, and properties through numerous approaches. However, these methods suffer from issues such as limited potential in scaling-up; restrictions on growth substrates and conditions e.g., temperature, atmosphere, and pressure; small crystalline domains; or structural and surface defects. There is need for a feasible synthetic strategy for scalable, substrate-free production of large area, single crystal 2D materials, with process-tunable structural and material properties.
Researchers at Purdue University have developed a substrate-free solution phase process to synthesize a new type of large-area, high-quality 2D semiconducting crystals of tellurium (tellurene). This new type of high quality, substrate-free 2D semiconducting crystal exhibits superior performance in room-temperature transistors. The tellurene devices can also operate stably in air for more than two months without any encapsulation, which is important for future practical technologies. This approach has the potential to produce stable, high-quality, ultrathin semiconductors with a good control of composition, structure, and dimensions for applications in electronics, optoelectronics, energy conversion, and energy storage. These 2D tellurene crystals add a new class of materials to the large family of 2D crystals and enable possibilities for the further investigation of many exciting properties and intriguing applications, such as piezoelectric, thermoelectric, high-speed RF devices, IR sensor, and topological insulator, which are complementary to those of existing 2D crystals, such as graphene, atomically thin chalcogenides, and oxides.
-High carrier mobility and air stable
Jun 1, 2018
Jun 19, 2017
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