|A memistor, or memory resistor, is one of the basic elements of electronic circuits because it can't be replaced by either a resistor, capacitor, or inductor. In 3D memory integration of memristors, layers of crossbars are stacked upon one another on a substrate with each layer separated by a layer of insulator. Each crossbar layer has row and column bars with memristor layers in-between. Inefficiencies exist in footprint and storage capacity as a result of this design.
Purdue University researchers have designed a memristor that stacks more crossbars for the same amount of space, allowing its density to be nearly doubled. This design sets the next generation in energy density and proves itself as an interesting design alternative because of its higher energy density and the dynamic insulator's thickness equivalent to three memristor layers. Since the number of crossbars is fewer for the new, extrapolated design, the power dissipation on the crossbars is expected to be reduced compared to conventional design. Field-programmable gate arrays (FPGAs) would greatly benefit from this design due to their need for large amounts of programmed data.
-Reduced footprint and increased storage capacity
-High computer memory density
-Field-programmable gate arrays (FPGAs)
May 22, 2015
Sep 26, 2017
Sep 25, 2017
May 22, 2014
Purdue Office of Technology Commercialization
1801 Newman Road
West Lafayette, IN 47906
Phone: (765) 588-3475
Fax: (765) 463-3486