| 66215 | |
| Graphene has many properties that make it ideal for electronic devices, such as a 2-D structure, high electron mobility, and high thermal conductivity. Producing sheets of graphene is accomplished currently with the techniques of mechanical exfoliation or chemical vapor deposition, but before the graphite can be functionalized, the sheets must be transferred from the metal surfaces where they grow to an insulator, which risks metal contamination and ruining the sheets. Researchers at Purdue University have developed a laser-growth method for forming graphene sheets on quartz. Using a laser has the advantages of high speed and being localized. Because the graphene is grown directly on an insulator, there is no need to transfer it, making this a one-step manufacturing process. Advantages: -Graphene grown directly on insulator -Fast, single-step process Potential Applications: -Electronics |
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May 30, 2013
Utility Patent
United States
10,000,384
Jun 19, 2018
Jun 5, 2012
Provisional-Patent
United States
(None)
(None)
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Purdue Office of Technology Commercialization The Convergence Center 101 Foundry Drive, Suite 2500 West Lafayette, IN 47906 Phone: (765) 588-3475 Fax: (765) 463-3486 Email: otcip@prf.org |
