| 66045 | |
| Many processes use direct-pulsed laser recrystallization to crystallize thin films because it improves electric mobility and reduces crystal defects. These processes usually require high temperatures and costly vacuum systems, making them non-selective and limiting the materials used for the substrate. Researchers at Purdue University have developed an alternative process that performs at low temperatures and at atmospheric pressure, making it less costly than currently used processes. This process would be widely used in thin film electronics such as solar cells, LEDs, and flexible electronics. Advantages: -Can be performed at low temperatures and at atmospheric pressure -Compared to alternative processes, less costly Potential Applications: -Thin film electronics -Solar industry -LEDs -Flexible electronics |
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Dec 14, 2015
DIV-Patent
United States
9,776,279
Oct 3, 2017
Nov 21, 2012
CIP-Patent
United States
9,211,611
Dec 15, 2015
May 23, 2011
Utility Patent
United States
8,349,713
Jan 8, 2013
Jan 18, 2012
Provisional-Patent
United States
(None)
(None)
Nov 22, 2011
Provisional-Patent
United States
(None)
(None)
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Purdue Office of Technology Commercialization 1801 Newman Road West Lafayette, IN 47906 Phone: (765) 588-3475 Fax: (765) 463-3486 Email: otcip@prf.org |