Organic Ferroelectric Based Random Access Memory

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The demand for nonvolatile random access memory (NVRAM) is rapidly increasing as high performance personal computers, smart phones, and gaming consoles become increasingly integrated and essential. The current need for nonvolatile computer storage relies primarily on flash memory. Flash memory suffers from problems of higher power consumption, slower write performance, and significantly less endurance than new NVRAM technology. The next generation of NVRAM technology is ferroelectric random access memory (FeRAM). FeRAM boasts faster writing capability and greater endurance than flash; however, the current state of FeRAM faces issues with storage capacity, processor compatibility, and cost.

Researchers at Purdue University have addressed the current problems in FeRAM technology and developed FETRAM (ferroelectric transistor RAM) technology. FETRAM retains the requisite nonvolatile, high endurance, and write performance of current FeRAM. FETRAM has been designed to be compatible with other complimentary metal-oxide-semiconductor (CMOS) devices. The design effectively increases packing density, leading to greater storage capacity. In addition to these advancements, materials used in FETRAM have lower processing temperature, which leads to less expensive fabrication techniques and lower production costs. Researchers have built and fully characterized a unique, fully functional, CMOS compatible memory cell using FETRAM technology. FETRAM memory cells have the potential to extend the application space for the FeRAM family to high speed CPU, hard disks, and stand-alone applications like smartphones.

-Enhanced compatibility
-Greater endurance
-Faster write performance
-Greater storage capacity
-Functional and fully characterized

Potential Applications:
-Computer Technology
Aug 3, 2012
United States
Nov 17, 2015

Apr 30, 2012
Utility Patent
United States

Apr 29, 2011
United States
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