Growth Process for Porous Nanorods

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Currently, DNA sequencing uses nanorod structures that require many processing steps. In addition, the nanopores have insulated pore walls, eliminating the potential for biosensing. In near-field imaging, current methods for fabricating porous tips for near-field scanning optical microscopy do not allow great uniformity at small pore sizes.

Researchers at Purdue University have developed a new method of fabricating Gallium Nitride (GaN) nanorods that have pores of variable sizes running through the center of each nanorod. These pores connect to channels below that connect the nanorods together and to outside structures. The nanorods can be tuned with a nanopore diameter ranging from 10 nm to 100 nm. Another benefit of this technology is the ability to utilize the GaN walls of the nanopore for electrical sensing. GaN is very robust and well suited for biological environments. Given GaN is a semiconductor, this technology can take advantage of an electrical interface between the biological agent and the porous nanorod. This technology could also be used for near-field imaging, where porous nanorods could be coated with a very thin layer of metal so that near-field light could be collected with approximately10 nm resolution.

Advantages:
-Tunable diameter (10 nm to 100 nm)
-Biosensing applications
-Near-field imaging applications

Potential Applications:
-DNA Sequencing
-Near-Field Imaging
-Ion-channel studies in cellular walls
Apr 5, 2011
Utility Patent
United States
8,986,835
Mar 24, 2015

Apr 5, 2010
Provisional-Patent
United States
(None)
(None)
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