High Voltage N-Channel Insulated Gate Bipolar Transistor (IGBT) in Silicon Carbide

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Insulated Gate Bipolar Transistors (IGBTs) combine the low drive characteristic of metal oxide semiconductor field effect transistors and the high power handling characteristic of bipolar transistors. These features make IGBTs ideal for high voltage switching applications. The use of silicon carbide as a process material yields IGBTs with even higher breakdown voltage capability, but introduces high parasitic series resistance.

A Purdue University researcher has developed a method and process for fabricating IGBTs in SiC. The method avoids the high resistance introduced from substrates in current manufacturing methods, while preserving the advantages of an N-type MOS channel.

Advantages:
-Provides enhanced conductivity
-P+ substrates are removed
-Very high parasitic saves resistance
Dec 6, 2010
DIV-Patent
United States
8,343,841
Jan 1, 2013

Jan 23, 2006
Utility Patent
United States
(None)
(None)

Jan 21, 2005
Provisional-Patent
United States
(None)
(None)
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